CITLF4

RF Frequency:                               0.5 to 4  GHz

Gain @ 20K:                                  36dB ± 3dB

Noise temperature @ 20 K:       <7K at 1.4 GHz,  < 8K  0..5 to  4 GHz

Noise figure @ 20 K:                   < 0.12 dB

Noise figure @ 300K                   <1.5 dB

IRL (-20log | S11 |)                      > 15 dB at 1 GHz, > 7dB 0.5 to 4 GHz

ORL (-20log | S22 |)                    > 20 dB at 1 GHz, >9dB 0.5 to 4 GHz

Operating temperature:             4.2 K- 320 K

DC power @300K                       1.5V, 12mA, 18mW

DC power @ 20 K:                      1.5V, 8.5mA, 13 mW

Output power for                       -3 dBm

     1 dB compression

Safe input power level               < 0 dBm

 The CITLF4 is a SiGe low noise amplifier intended for extremely low noise cryogenic applications. The amplifier utilizes resistive feedback to achieve good input match (S11) and high gain stability. The amplifier is optimum for the frequency range 0.5 to 4 GHz but is useful to 6 GHz.

It  is powered from a single positive DC supply which is optimum at 1.5V but can be reduced to as low as 1.2V for low power dissipation. Application of up to 6V will not damage the amplifier. It is recommended that the power supply for the amplifier be current limited to 100mA. A series resistor may be used. For example 360 ohms to a +5V supply will provide 1.5V, 9mA when the amplifier is at 20K.

The amplifier offers an optional DC bias tee for an external device connected to the amplifier input. The bias tee is formed by two 20K resistors connected to the input; one can be used as a source of current and one the sense the voltage across the external device. Voltages applied to the bias tee have no effect on amplifier operation. This option is available in a 5K or 20K bias tee.

The amplifier is 20.7mm x 15.9mm x 8.7mm excluding connectors with input SMA at left and output SMA at right. For more information and complete specs, please download pdf data sheet 

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