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Cryogenic HEMT Low Noise Amplifier


RF Frequency:                             4 to 16 GHz

Gain @ 20 K:                               38dB ± 2dB

Noise temperature @ 20 K:          <7 K at 4 to 16 GHz

Noise figure @ 20 K:                   <0.13 dB

Noise figure @ 300K:                  <1.5 dB

IRL (-20log |S11|):                        >7 dB (stablem all frequencies)

                                                      >10 dB at 8 to 16 GHz

ORL (-20log |S22|):                      > 10 dB at 3 to 16 GHz

Operating temperature:                4.2 K - 320 K

DC power @300K:                      1.2 V, 37mA, 45mW

DC power @ 20 K:                      1.2 V, 23mA, 28 mW

Output power for                         -3 dBm

     1 dB compression:

Safe input power level:                 < 0 dBm


The CITCRYO4-16 is a GaAs HEMT cryogenic, low noise, broadband amplifier. It utilizes SMA jacks for RF-input and output and a 4-pin 2 mm pitch header for DC bias. The amplifier requires one drain voltage in the 0.6 V to 1.5 V range  and one gate voltage in the -3 V to +1 V range (terminals Vg1 = Vg2) into 11K DC resistance.  See the table on p. 4 of the PDF for performance vs bias voltages. If desired, the gate supply can be eliminated (open pins on Vg1 and Vg2) at slightly less than optimum performance.


The amplifier may be operated at room temperature to give a noise figure <1,7 dB and gain ~30 dB. Note that a more negative gate supply voltage, typically -1.5 V is required at room temperature. However the amplifier is not damaged if the gate voltage for cryogenic operation, typically 0 V, is applied at room temperature (though the gain is very low). Input and output return loss change very little from 300 K to 4 K. For more information and complete specs, please download the PDF data sheet.

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