• Noise as low as 3.4K at 1 GHz

  • Gain flat +/-1 dB from 10 MHz to 1 GHz

  • Usable over a wide range of DC power from  2mW to 60mW

  • Single power supply voltage in the 1.2V to 2.5V range

  • Good input and output match from 10 MHz to 2 GHz.

  • Operates from below 4K to 350K


The CITLF2 a SiGe low noise amplifier intended for extremely low noise cryogenic applications. The amplifier utilizes resistive feedback to achieve good input match (S11) and high gain stability. The amplifier is optimum for the frequency range  0.01 to 2 GHz.


It  is powered from a single positive DC supply which is optimum at 1.5V but can be reduced to as low as 1.1V for low power dissipation. Application of up to 5V will not damage the amplifier. It is recommended that the power supply for the amplifier be current limited to 100mA. A series resistor may be used. For example 470 ohms to a +5V supply will provide 1.5V, 7.5mA when the amplifier is at 20K.  See table and graph in the pdf data sheet for performance vs bias voltage.


The amplifier offers an optional DC bias tee for an external device connected to the amplifier input. The bias tee is formed by two 20K resistors connected to the input; one can be used as a source of current and one the sense the voltage across the external device. Voltages applied to the bias tee have no effect on amplifier operation. The maximum bias voltage magnitude is 20V. This option is available in a 5K or 20K bias tee.


The maximum RF  input power to be applied to the amplifiers without damage is +10dBm.


The amplifier is 20.7mm x 15.9mm x 8.7mm excluding connectors  with input SMA at left and output  SMA at right. For more information and complete specs, please download the pdf data sheet.

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